Program
Friday September 20
Evening
19:00 – Opening Remarks and Dinner
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September 21 (Saturday)
Morning
Session 1: Dilute magnetic semiconductors and their properties
08:00 – 10:00 1 keynote (40min). +4 talks (20min each)
Coffee Break
10:00 – 10:30
Session 2: Transition metal doping of semiconductors
10:30-12:30 (40min). +4 talks (20min each)
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Buffet Lunch 12:30 – 13:30
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Afternoon
Session 3: Rare earth doping of semiconductors (Part 1)
13:30-15:50: 1 keynote (40min). +5 talks (20min each)
Coffee Break
13:50 – 16:20
Session 4: Magneto and photonic device design & fabrication
16:20 -18:20 1 keynote (40min). +4 talks (20min each)
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Evening
19:00-21:00 Reception and Dinner
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September 22 (Sunday)
Morning
Session 5: Theoretical studies (of room temperature DMS)
8:30 – 10:00: 1 Keynote (40min + 2 Talks (20min each)
Coffee break
9:50 – 10:20
Session 6: Rare earth doping of semiconductors (Part 2)
10:20-12:40 7 talks (20 min each)
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Buffet Lunch 12:40 – 13:40pm
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Afternoon:
13:40-17:00 Walking Tour of Nara. in Nara National Park
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Evening
19:00 - 20:00 Dinner
20:00-21:30 Panel Discussion Lead by Keynote Speakers
What are the most pressing questions?
What should be the next steps ?
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September 23 (Monday)
Morning
8:30-11:00 Wrap -Up Session
Session 1 Dilute magnetic semiconductors (DMS) and their properties
September 21, 8am-10pm
Keynote
Gd-doped III-Nitride Diluted Magnetic Semiconductors for Circular-Polarized Semiconductor Lasers
H. Asahi, S. Hasegawa, Y.K. Zhou, and S. Emura
The Institute of Scientific and Industrial Research, Osaka University
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ESR Studies of Magnetic Semiconductors
H. Ohta1,2, F. Elmasry2, S. Okubo1, T. Shimokawa3, Y. Fujiwara4, and T. Kita5
1Molecular Photoscience Research Center, Kobe University, 2Graduate School of Science, Kobe University, 3Center for Collaborative Research and Technology Development, Kobe University, 4Graduate School of Engineering, Osaka University, 5Graduate School of Engineering, Kobe University
The Influence of Strain Induced Electric Fields on Magnetization in Erbium doped GaN thin films
N. T. Woodward, B. Mitchell1, I. W. Feng2, J. Li2, H. X. Jiang2, J. Y. Lin2, J. M. Zavada3, and V. Dierolf
Lehigh University, 1Department of Electrical and Computer Engineering, Texas Tech University, 2Department of Electrical and Computer Engineering, Polytechnic Institute of New York University, 3National Science Foundation
Room Temperature Magneto-optical Properties and Atomic Layer Epitaxy of III-Nitrides
N. Nepal1*, C.R. Eddy, Jr.1, N. El-Masry2, H.X. Jiang3, J.Y. Lin3, and J. M. Zavada4
1U.S. Naval Research Laboratory, 2North Carolina State University, 3Texas Tech University,
4National Science Foundation
Induced Magnetic Moment of Eu3+ Ions in GaN
Vyacheslav Kachkanov1, Kevin O’Donnell2, Gerrit van der Laan1, and Yasufumi Fujiwara3
1Diamond Light Source Ltd, 2Department of Physics, University of Strathclyde, 3Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
Session 2: Transition metal doping of semiconductors
September 21, 10:30am-12:30pm
Keynote
Magnetoresistance in InMnAs/ InAs Heterojunctions
J. A. Peters1, C. Garcia1, and B. W. Wessels1,2
1Materials Research Center, 2Department of Electrical Engineering and Computer Science, Northwestern University
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Control of Ferromagnetic Behavior in TM/RE-doped GaN Thin Films
J. M. Zavada1, N. Nepal2, N. El-Masry3, H. X. Jiang4 , and J.Y. Lin4
1National Science Foundation, 2Currently at the U.S. Naval Research Laboratory, 3North Carolina State University, 4Texas Tech University
Electron-spin Dynamics in GaAs Quantum Wells Coupled with II-VI Diluted Magnetic Semiconductors
A. Murayama
Graduate School of Information Science and Technology, Hokkaido University
L. Bi1, J. Hu2, P. Jiang3, H. S. Kim3, D. H. Kim3, G. F. Dionne3, C. A. Ross3, J. L. Xie1,
and L. J. Deng1
1University of Electronic Science and Technology of China, 2Department of Materials Science & Engineering, University of Delaware, 3Department of Materials Science & Engineering, Massachusetts Institute of Technology
Ultrafast Optical Manipulation of Magnetization of Ferrimagnet by Femtosecond Pulsed Laser
A. Tsukamoto,
College of Science and Technology Nihon University
Session 3 Rare Earth Doping of Semiconductors (Part 1)
September 21, 13:30-15:50
Keynote
Growth and optoelectronic properties of erbium doped GaN
Hongxing Jiang,1 I-Wen Feng,1 Jing Li,1 Jingyu Lin,1 and John Zavada2
1Department of Electrical and Computer Engineering, Texas Tech University, 2Department of Electrical and Computer Engineering, Polytechnic Institute of New York University
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Local-structure Dependent Energy Transfer from the Host to Eu Ions in Eu-doped GaN
Y. Fujiwara1, R. Wakamatsu1, D. Lee1, V. Dierolf2, and A. Koizum1
1Graduate School of Engineering, Osaka University, 2Department f Physics, Lehigh University
Correlation of Mg and Eu Concentrations on the Luminescence Capability in Eu and Mg Co-doped GaN
A. Wakahara, H. Sekiguchi, R. Matsumura, T. Otani, and H. Okada
Toyohashi University of Technology
Masashi Ishii
National Institute for Materials Science (NIMS)
Gd Doping in AlN and Bright Ultraviolet Light Emission
Takashi Kita
Department of Electrical and Electronic Engineering, Kobe University
Study on Upconversion Properties of NaYF4:Er Nanocrystals by Off-Resonant Excitation
K. Akimoto, Xianjia Luo, and T. Sakurai
Institute of Applied Physics, University of Tsukuba
Session 4: Magneto and photonic device design & fabrication
September 21,16:20-18:20
Keynote
Spin-Photonics with Semiconductors and Metallic Thin Films
Imaging Sci. & Engin. Lab., Tokyo Institute of Technology
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H. Shimizu
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology
Magneto-switching: From Spin Transfer Torque to Plasmonic-enhanced Ultrafast Opto-Magnetism
Kang L. Wang
Department of Electrical Engineering, University of California at Los Angeles
Is GaN:Gd a Viable Route for Spin Polarized Emitters?
A. G. Melton1, B. Kucukgok1, Z. Liu1,2, N. Dietz3, N. Lu1,4 and I. T. Ferguson1,3
1Department of Electrical and Computer Engineering, UNC Charlotte, 2 R&D Center for Semiconductor Lighting, Chinese Academy of Sciences, 3Department of Physics and Astronomy, Georgia State University, 4Department of Engineering Technology, UNC Charlotte
Room Temperature Circularly Polarized Lasing in (110) Spin-VCSELs
K. Ikeda and H. Kawaguchi
Graduate School of Materials Science, Nara Institute of Science and Technology
Session 5: Theoretical studies (of room temperature DMS)
September 22 8:30 -9:50
Keynote
Magnetism in Eu Doped GaN bulk and nanoparticles: Effects of Si codoping
Vijay Kumar
Dr. Vijay Kumar Foundation, India and Center for Informatics, School of Natural Sciences, Shiv Nadar University
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First-principle Investigation on Electron Induced Hydrogen Migration in Eu/Mg Co-doped GaN
Donghwa Lee1, Brandon Mitchell2, and V. Dierolf 2
1Lawrence Livermore National Laboratory, 2Physics Department, Lehigh University,
Computational Nano-materials Design and Realization for Semiconductor Nano-spintronics
H. Katayama-Yoshida1, T. Fukushima1, M. Seike1, H. Fujii1 and K. Sato2
1Graduate School of Engineering Science, 2Graduate School of Engineering, Osaka University
Session 6: Rare earth doping of semiconductors (Part 2)
Sunday 22 8:30am -10am
Er doping of Si and Si-based media
S. Saeed and T. Gregorkiewicz
University of Amsterdam
A. Koizumi1, R. Wakamatsu1, D. Lee1, Y. Saitoh1, Y. Kuboshima2, Y. Mogi2, S. Higashi2,
K. Kikukawa2, H. Ofuchi3, T. Honma3, and Y. Fujiwara1
1Graduate School of Engineering, Osaka University, 2Kojundo Chemical Laboratory Co., Ltd., 3Japan Synchrotron Radiation Research Institute (JASRI/SPring-8)
B. Mitchell1, Y. Fujiwara2, and V. Dierolf1
1Lehigh University, 2Osaka University
Mutual Energy Transfer between Eu Luminescent Sites in GaN under Resonant Excitation
R. Wakamatsu, D. Lee, A. Koizumi, and Y. Fujiwara
Graduate School of Engineering, Osaka University
Coherent optical control of a single erbium center in GaN
N. Q. Vinh
Department of Physics, Virginia Tech
Rare earth doping of transparent ceramics for high energy laser applications
Y. Kodera, E. H. Penilla, A.T. Wieg, C. Hardin, and J. E. Garay
Advanced Materials Processing and Synthesis (AMPS) Laboratory, Department of Mechanical Engineering, Materials Science and Engineering Program, University of California Riverside
Luminescence of ErxY2-xSiO5 in Si Slot Waveguide Structures
Hideo Isshiki, Zul Izwan Bin Zulkefli, Takayuki Nakajima, Yuichi Terada,
and Tadamasa Kimura
Dept. of Engineering Science, The University of Electro-Communications