Nanoelectronics
Laboratory Measures |
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Charge Pumping and
Linear Voltage Ramp Techniques
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Charge Pumping Technique:
 Determine
interface and near interface traps densities
 Study
the device reliability to endurance stress of thin oxides
Linear voltage ramp (LVR) or Split-C-V technique:
Characterize
the mobile ions in the oxide layer when performed at elevated
temperatures
Extract
independently inversion charge to determine the effective
device mobility
Extract
thickness of multi-layer thin gate dielectric devices, such
as NVSM devices
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