Gary G. DeLeo



 

Professor of Physics
Lehigh University
Tel: (610) 758-3413
Fax: (610) 758-5730
e-mail: lgd0@lehigh.edu


Education
1974 B.S., Physics, S.U.N.Y. at Fredonia , NY
1976 M.S., Physics, The University of Connecticut
1979 Ph.D., Physics, The University of Connecticut

Positions
1979-82 Visiting Assistant Professor, Research Associate, Lehigh University
1982-85 Assistant Professor, Lehigh University
1985-90 Associate Professor, Lehigh University
1990- Professor, Lehigh University
1993-00 Associate Dean, College of Arts and Sciences, Lehigh University
1994- Director of Science Outreach Programs, Lehigh University
2000-02 Chair, Department of Physics, Lehigh University

Research Activities
Recent Work: Theory of Binary-Star Systems. Orbital analysis of visual binary systems. Mass flow and ultraviolet spectroscopy of interacting (close) binary stars.

Earlier Work: Theory of Defects in Semiconductors and Insulators. Electronic structure, electron spin resonance, and optical-absorption properties of defects in semiconductors and insulators. Lattice dynamics and electron-lattice interactions. Electronic-structure and molecular-dynamics calculations of defects in semiconducting crystals.

Professional Activities and Societies
Member, American Physical Society
Member, American Astronomical Society
Member, American Association for the Advancement of Science
Member, American Association of Physics Teachers
Member, Phi Beta Kappa ( Lehigh University Chapter President, 2004-5)
Member, Sigma Xi
Member, Board of Directors, Discovery Center of Science and Technology, 1997-98
Member, International Advisory Committee, ICDS, 1991-97
Co-Chair, 16th International Conference on Defects in Semiconductors (ICDS), 1991

Awards
1986 Tau Beta Pi Excellence in Teaching Award
1987 College of Engineering and Physical Sciences Service Teaching Award
1988 Stabler Award for Excellence in Teaching
1996 Friend of Education Award, Bethlehem Area School District
2000 Election to Science Hall of Fame, Discovery Center , Bethlehem , PA
2000 PA House of Representatives Citation for Science Outreach Service

Publications

Boucher, D.E., G.G. DeLeo, and W.B. Fowler. 1999. Simulations of GaN using an environment-dependent empirical tight-binding model. Phys. Rev. B 59: 10064-10070.

McGill , S.A. , K. Cao, W.B. Fowler, and G.G. DeLeo. 1998. Bound polaron model of effective-mass binding energies in GaN. Phys. Rev. B 57: 8951-8956.

Boucher, D.E., Z.A. Gal, G.G. DeLeo, and W.B. Fowler. 1998. Simulation of vacancy pairs in GaN using tight-binding molecular dynamics. Mat. Res. Soc. Symp. Proc. Vol. 482: 941-946.

Inbar, I. , and G.G. DeLeo. 1995. A new tight-binding total energy method for ferroelectric oxides . Ferroelectrics 164: 213-224 .

Boucher, D.E., and G.G. DeLeo. 1994. Tight-binding quantum molecular-dynamics simulations of hydrogen in silicon. Phys. Rev. B 50: 5247-5254.

Inbar, I. , and G.G. DeLeo. 1994. Tight-binding total energy study of phase transitions in KNbO 3 . Ferroelectrics 153: 13-18 .

Burnard, M.J., and G.G. DeLeo. 1993. Interstitial carbon and the carbon-carbon pair in silicon: Semiempirical electronic-structure calculations. Phys. Rev. B 47: 10217-10225.

Myers, S.M. et al. 1992. Hydrogen interactions with defects in crystalline solids. Rev. Mod. Phys. 64: 559-617.

Martin, K.R., W.B. Fowler, and G.G. DeLeo. 1992. Rigid rotor in a tetrahedral field. Materials Science Forum 83-87: 69-74.

DeLeo, G.G. 1991. Theory of hydrogen-impurity complexes in semiconductors. Physica B 170: 295-304.

Besson, M., and G.G. DeLeo. 1991. Electronic structure of interstitial carbon in silicon. Phys. Rev. B 43: 4028-4033.

DeLeo, G.G., and W.B. Fowler. 1991. Computational studies of hydrogen-containing complexes in semiconductors. In, Semiconductors and Semimetals, Vol. 34, pp. 511-546, ed. R.K. Willardson and A.C. Beer; vol. ed. J.I. Pankove and N.M. Johnson (Academic Press, Boston).

Watkins, G.D., W.B. Fowler, G.G. DeLeo, M. Stavola, D.M. Kozuch, S.J. Pearton, and J. Lopata. 1990. Fermi resonance effects on the vibrational modes of hydrogen-passivated boron in silicon. Materials Research Society Symposium Proceedings 163: 367-375.

Watkins, G.D., W.B. Fowler, M. Stavola, G.G. DeLeo, D.M. Kozuch, S.J. Pearton, and J. Lopata. 1990. Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair. Phys. Rev. Lett. 64: 467-470.

Dutt, D.A., F.J. Feigl, and G.G. DeLeo. 1990. Optical absorption and electron paramagnetic resonance studies of chemically reduced congruent lithium niobate. J. Phys. Chem. Sol. 51: 407-415.

DeLeo, G.G., W.B. Fowler, T.M. Sudol, and K.J. O'Brien. 1990. Semiempirical electronic-structure calculations of the hydrogen-phosphorus pair in silicon. Phys. Rev. B 41: 7581-7586.

Fowler, W.B., G.G. DeLeo, and M.J. Dorogi. 1989. Semiempirical electronic-structure calculations of bond-centered interstitial hydrogen in silicon. (Mater. Sci. Forum 38-41: 985-989.

Besson, M., G.G. DeLeo, and W.B. Fowler. 1988. Band structure of silicon from the semiempirical modified neglect of diatomic differential overlap method. Phys. Rev. B 38: 13422-13425.

DeLeo, G.G., M.J. Dorogi, and W.B. Fowler. 1988. Bond-centered interstitial hydrogen in silicon: Semiempirical electronic-structure calculations. Phys. Rev. B 38: 7520-7529.

DeLeo, G.G., J.L. Dobson, M.F. Masters, and L.H. Bonjack. 1988. Electronic structure of an oxygen vacancy in lithium niobate. Phys. Rev. B 37: 8394-8400.

DeLeo, G.G., G.D. Watkins, and W.B. Fowler. 1988. Relationship between the pseudo-Jahn-Teller effect and chemical rebonding. Phys. Rev. B 37: 1013-1015.

DeLeo, G.G., W.B. Fowler, G.W. Barry, and M. Besson. 1986. Electronic structures of substitutional off-center and small-aggregate defects in silicon by semiempirical Green's function methods. Mater. Sci. Forum 10-12: 31-36.

Besson, M., G.G. DeLeo, and W.B. Fowler. 1986. Tight-binding Green's function approach to off-center defects: Nitrogen and oxygen in silicon. Phys. Rev. B 33: 8188-8195.

DeLeo, G.G., and W.B. Fowler. 1986. Hydrogen-acceptor pairs in silicon. Phys. Rev. Lett. (Comment) 56: 402.

DeLeo, G.G., and W.B. Fowler. 1985. Hydrogen-acceptor pairs in silicon: Pairing effect on the hydrogen vibrational frequency. Phys. Rev. B (Rapid Communications) 31: 6861-6864.

DeLeo, G.G., C.S. Milsted, Jr., and J.C. Kralik. 1985. Substitutional oxygen-oxygen pair in silicon. Phys. Rev. B 31: 3588-3592.

DeLeo, G.G., and W.B. Fowler. 1985. Alternative dangling-bond passivation at lattice vacancy in silicon. J. Elect. Mat. 14a: 745-751.

Montgomery , S.L., and G.G. DeLeo. 1984. Electronic structure of third-period interstitials in silicon. Phys. Rev. B 30: 771-774.

DeLeo, G.G., W.B. Fowler, and G.D. Watkins. 1984. Theory of off-center impurities in silicon: Substitutional nitrogen and oxygen. Phys. Rev. B 29: 3193-3207.

DeLeo, G.G., W.B. Fowler, and G.D. Watkins. 1984. Electronic structure of hydrogen- and alkali-metal-vacancy complexes in silicon. Phys. Rev. B 29: 1819-1823.

Watkins, G.D., G.G. DeLeo, and W.B. Fowler. 1983. Theory of defects in silicon: Recent calculations using finite molecular clusters. Physica 116B: 28-38.

DeLeo, G.G., G.D. Watkins, and W.B. Fowler. 1982. Many-electron effects for interstitial transition-metal impurities in silicon. Phys. Rev. B 25: 4962-4971.

DeLeo, G.G., G.D. Watkins, and W.B. Fowler. 1982. Level positions of interstitial transition-metal impurities in silicon. Phys. Rev. B 25: 4972-4980.

DeLeo, G.G., G.D. Watkins, and W.B. Fowler. 1981. Theory of interstitial transition-metal impurities in silicon. Phys. Rev. B 23: 1851-1858.

DeLeo, G.G., R.C. Kern, and R.H. Bartram. 1981. R Center in KCl: II. Line-shape calculations of the R 2 band. Phys. Rev. B 24: 2222-2231.

Kern, R.C., G.G. DeLeo, and R.H. Bartram. 1981. R center in KCl: I. Point-ion electronic-structure calculation with application to magneto-optical parameters. Phys. Rev. B 24: 2211-2221.

Bartram, R.H., L.A. Kappers, and G.G. DeLeo. 1976. Electron-spin resonance of uv-irradiated sodium azide. Phys. Rev. B 14: 5482-5489.


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Last updated: July 11, 2005