Electron Mobility in SONOS Non-Volatile Semiconductor Memory Devices
Joshua Goldman (undergraduate student), Dr. Marvin H. White (advisor), Gan Wang, Nathan Eichenlaub (graduate student advisors)
Department of Electrical Engineering, Sherman Fairchild Center for Solid State Studies
Abstract
As field effect transistors continue to get scaled down, changes to the structure of the devices are necessary to ensure proper functionality. The use of SONOS NVSM models inadvertent charge trapping in CMOS devices fabricated with a high-K dielectric blocking oxide.
Bio
Joshua Goldman is a senior at Lehigh University majoring in Electrical Engineering and is also a member of the Integrated Business & Engineering Honors Program. He is a Rossin Junior Fellow and has taken part in the university's community as a specialty tour guide for the engineering college and as a residential housing council representative. Joshua spent this past summer researching semiconductor devices in Dr. Marvin H. White's group located in the Sherman Fairchild Center for Solid State Studies. He has also continued work this semester in the Sherman Fairchild Center, primarily dealing with the fabrication of SONOS devices. Upon completion of his undergraduate studies in the fall, he intends to follow a career path which will allow him to maximize the wide variety of business and engineering skills he has learned.
