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Nano- and Micro-Mechanical Behavior

Thin Film Deposition

  • Sputter deposition (AJA International)
    • 3 targets, co-sputtering arrangement, RF and DC magnetron
    • ideal for alloy deposition and multilayer stacks
    • typical targets: Cu, Al, Ti, Au, Pt, Ni, W, V, Ni-V, Pt-Ru
    • base pressure typically 3 x 10-7 torr
    • substrate bias, reactive sputtering and substrate heating capability
    • in-situ substrate curvature (film stress) measurement is possible
    • 3" wafers and odd sized substrates possible
  • Evaporation
    • Resistance heated, 3 boats
    • typical materials: Cu, Al, Ni, Au
    • base pressure typically 8 x 10-7 torr
    • odd sized substates possible

Small-scale Mechanical Testing

  • Nanoindentation (Hysitron Triboscope on DI small sample AFM)
    • Surface imaging with indentation tool
    • Vertical loading: 1nN - 10 mN, Lateral loading: 3 µN - 10 mN
    • Scratch testing, micro/nano-wear testing
    • Heating to 150 °C
    • Typical specimens: thin films, coatings, treated surfaces, small structures
  • Micro-tensile load frames
    • Load resolution: <1 mN
    • Displacement: 5 nm - 50 µm
    • Heating to 400°C (in development)
    • Typical specimens: thin films, fine wires
  • Mini-tensile load frame
    • Environmental Scanning Electron Microscope in-situ testing compatibility
    • Load cells: 250 g,-f, 100 lbs., 1000 lbs. tension/compression
    • Displacement: µm - mm range
    • Tension, compression, 3 or 4 point bending
    • Typical specimens: wires, foils, small structures (metal, ceramic, polymer)
  • Nano/Micro-contact tribology apparatus
    • 10 g-f load cell
    • simultaneous load and contact resistance measurements
  • Thin film stress tool, substrate curvature
    • N2 up to 500 °C
    • Vacuum up to 800 °C
    • Typical specimens: thin films on Si wafer substrates
  • Thin film adhesion test fixtures, 4-point bend
  • Thin film stress measurement, in-situ wafer curvature (k-Space)
  • Thin Film Creep measurement by membrane resonance
    • Vacuum up to 500 °C
    • Typical specimens: electrically conductive thin films on Si wafer substrates
    • Capable of stress measurement in films of nano-scale thickness
  • Thin Film Bulge test (vacuum, elevated temperature, under development)
    • Typical specimens: electrically conductive thin films on Si wafer substrates
    • Same sample geometry as membrane resonance; complementery technique
    • Capable of stress measurement in films of nano-scale thickness

Surface Roughness Measurement

  • Atomic Force Microscope (Digital Instruments 3000, also small sample heads)
    • Vertical range: 5 nm - 5 µm
    • Horizontal range: 1 µm - 100 µm square
    • Chemical cells
    • Contact, Tapping Mode, SPM

Sample Preparation

  • Bulk micromachining by TMAH or KOH
  • RIE of metals and nitrides

Medium/Large scale Mechanical Testing

  • Charpy and Izod testers
  • Instron 5567 load frame
    • Load cells: 100 lbs., 6000 lbs. tension/compression
    • Displacement: µm -m range
    • Strain gage channel
    • Merlin software suite

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