
MatPAC
Courses Offered - University of Pennsylvania
MSE
590 Surface and Thin Film Analysis Techniques
Textbook
Fundamentals of Surface and Thin Film Analysis, (L. Feldman and J. Mayer,
North Holland,1986).
Prerequisites
MSE 221 or equivalent
Course
Objective
One objective of MSE 590 is to study the fundamental physics of the
interaction of ions, electrons, photons, and neutrons with matter. A
second objective is to use the products of these interactions to characterize
the atomic (or molecular) structure, composition, and defects of a semiconductor,
ceramic, polymer, composite, or metal. Ion beam techniques will include
Rutherford backscattering and forward recoil spectrometry, and secondary
ion mass spectrometry. Electron probe techniques will include electron
energy loss spectrometry and low-energy electron diffraction. Photon
techniques will include x-ray photoelectron spectroscopy. Neutron techniques
will include neutron reflectivity. The strengths and weaknesses of each
technique will be discussed. Examples will be drawn from metallurgy,
electronic materials, polymer science, ceramic science, archaeology,
and biology.
Course
Description
The surface and near-surface regions of materials can be modified using
lasers, ion beams, oxidation, adsorption, and a host of other methods.
This ability to tailor a surface or interface is the key to our materials
based future. Recently, new analytical techniques have emerged to meet
the characterization demands of materials modification. Upon ion implantation
of arsenic into silicon, how is the arsenic distributed? Upon welding
two polymer layers, have molecules diffused across the interface? Upon
growing a silicide on silicon, is the overlayer in registry with the
substrate? To demonstrate techniques, these materials questions will
prevade the course. This course is intended for seniors through graduate
level. The purpose of this course is to answer two basic questions:
MSE
620 Electrical Properties of Ceramics
Course
Description
Ionic conduction mechanisms, mixed electronic and ionic conduction,
defects and grain boundary effects, ceramic electrolytes and electrodes,
application to batteries, fuel cells and chemical sensors, ceramic capacitors,
piezoelectric ceramics.
MSE
650 Micromechanisms of Deformation and Fracture
Course
Description
Basic mechanisms of deformation and fracture, theory of dislocations(continuum
theory and effects of the atomic structure), deformation properties
of different crystal structures (fcc, bcc, hcp, ordered alloys, amorphous
materials), hardening mechanisms (solid solution and dispersion hardening),
creep deformation and fracture at high temperatures, micromechanisms
of fracture.
Major
References
D. Hull and D. Bacon, Introduction to Dislocations, Pergamon Press
R.W.K. Honeycombe, The Plastic Deformation of Metals, St. Martin's Press
J.P. Hirth and J. Lothe, Theory of Dislocations, McGraw-Hill
J. Friedel, Dislocations, Pergamon Press
MSE
660 Atomistic Modeling in Materials Science
Prerequisite
Basic condensed matter physics, differential equations, structure of
materials and basic notions of point defects, interfaces and dislocations.
Literature
D.W. Heerman, Computer Simulation Methods in Theoretical Physics, Springer.
M.P. Allen and D.J. Tildesley, Computer Simulation of Liquids, Clarendon
Press, Oxford.
Computer Simulation of Solids, Lecture Notes in Physics, Springer; Editors,
C.R.A. Catlow and W.C. Mackrodt.
A.P. Sutton, Electronic Structure of Materials, Clarendon Press, Oxford.
J.H. Harding, Computer simulation of defects in ionic solids, Rep. Prog.
Phys. 53, 1403, 1990.
Selected papers.
MSE
670 Statistical Physics of Solids
Course
Description
This course constitutes an introduction to statistical mechanics with
an emphasis on application to crystalline solids. Ensembe theory, time
and ensemble averages and particle statistics are developed to give
the basis of statistical thermodynamics. The theory of the thermodynamic
properties of solids is presented in the harmonic approximation an harmonic
properties are treated by the MieGruneisen method. Free electron theory
in metals and semiconductors is given in some detail, with the transport
properties being based on conditional transition probabilities and the
Boltzmann transport equation. The theory of order-disorder alloys is
treated by the Bragg-Williams, Kirkwood and quasi-chemical methods.
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