Among the faciltiies within the Smith Family Lab are instrumentation for III-V semiconductor MOCVD epitaxy, characterization, and cleanroom fabrication, as follows.
The Smith Lab's MOCVD epitaxy reactors -- a VEECO P-75 and VEECO D-125 -- are used for III-Nitride and GaAs/InP research, respectively.
The VEECO P-75 supports research on AlInGaN materials and devices for optoelectronics and nanostructures. The reactor is equipped with 6 metalorganic sources (TMIn, TMGa, TEGa, TMAl, and Cp2Mg), and is capable of growing compound semiconductor materials containing In, Ga, Al, and N. Dopant species of Mg and Si are available for device applications. It is also used to pursue research on low-cost and compact deep-UV light sources using AlInGaN semiconductor nanostructures, efficient white-light LEDs, InGaN semiconductor nanostructure optoelectronics, GaN-based electronics devices, and InN-based semiconductor thin film and nanostructures. A new line for Cr-/Mn-precursor has also been installed for pursuing III-Nitride spintronics materials. The P-75 is also equipped with RealTemp® in situ capabilities, which allow real-time correction of emissivity during epitaxial deposition for reliable and repeatable temperature readings. The utilization of RealTemp® enables extremely accurate growth rate measurement, quantitative analyses of buffer layers, and estimation of the composition of ternary and quaternary materials. Because of the high degree of repeatability from one run to the next, the Lab is able to focus on making small adjustments needed to closely examine novel compound semiconductor materials and ultimately improve results.
The VEECO D-125 is dedicated for optoelectronics and nanostructure research on GaAs/InP substrates.The D-125 MOCVD reactor has been customized for 12 metalorganic sources (2 TMGa, 2 TMIn, 2 TMAl, TMSb, UDMhy, TBP, TBA, DEZn, and CBr4), which allows the versatile growth of novel and new semiconductor material system. The reactor is capable to grow compound semiconductor materials containing In, Ga, Al, As, P, Sb, and N. Elements of Zn, C, and Si are also available in D-125 reactor for doping purposes. The D-125 reactor is also used to grow dilute-nitride and Sb-based semiconductor nanostructure optoelectronics devices, quantum dots lasers and amplifiers, interdiffused quantum dots, solar cell, and terahertz sources. Like the D-75, the D-125 is equipped with in situ RealTemp®.
In addition to the III-V epitaxy capabilities, extensive material characterization facilities are available in Smith Laboratory, including Hall measurements, optical reflectance, photoluminescence mapper, X-Ray diffractometer, atomic force microscopy, confocal and scanning near-field optical microscopy.
The cleanroom facility supports research and development in microfabrication techniques and device fabrication. All the semiconductor optoelectronic materials grown in the MOCVD laboratory will be fabricated into devices in this new cleanroom facility. The cleanroom facility include photolithography (Karl Suss MA-6), intermixing/contact annealing (RTA), III-V and dielectric etchers (ICP and RIE), SiO2 and Si3N4 deposition (PECVD), metallization and AR/HR (e-beam evaporator and sputterer), holography system (grating formation for DFB/DBR lasers), wet etching, wafer thinning, laser scribing, and basic laser packaging.
A new electron-beam lithography system is available for use in the Sherman Fairchild Lab. A versatile Focused Ion Beam (FIB) instrument, useful for realization in nanofabrication of photonic crystals and optoelectronic devices, is also available in Lehigh's Center for Advanced Materials and Nanotechnology.