List of Publications

• Ashtosh Ganjoo and H. Jain
  Millisecond kinetics of photoinduced changes in the optical properties of a-As2S3 films
  Phys. Rev B, 74 , (2006) 024201 .

• A. Ganjoo, H. Jain, C. Yu, R. Song, J.V. Ryan, J. Irudayaraj, Y.J. Ding, C.G. Pantano
  Planar chalcogenide glass waveguides for IR evanescent wave sensors
  J. Non-Cryst. Solids, 352 (2006) 584.

• Chenxu Yu, Ashtosh Ganjoo, H. Jain, C. G. Pantano and Joseph Irudayaraj
  Mid-IR Biosensor: Detection and Fingerprinting of Pathogens on Gold Island Functionalized Chalcogenide Films
  Analytical Chemistry , 78 (2006) 2500.

• Ashtosh Ganjoo, G. Chen and H. Jain
  Photoinduced changes in the local structure of a-GeSe2 by in-situ EXAFS.
  Phys. and Chem. Of Glasses - Europian J. of glass Sci. and Tech., Part B, 47, (2006) 177.

• Ashtosh Ganjoo, H. Jain, J.V. Ryan, R. Song, R. Chanda, J. Irudayaraj, Y.J. Ding and C.G. Pantano
  An integrated chalcogenide glass waveguide for IR evanescent wave sensors.
  XIV th International symposium on non-oxide glasses and new optical glasses, Florida, USA, November 2006. (In press: Phys. and Chem. Of Glasses)

• G. Chen, H. Jain, M. Vlcek and Ashtosh Ganjoo
  A comprehensive model of photo-expansion and contraction in arsenic chalcogenide based on the dominant role of sub-nano molecules
  XIV th International symposium on non-oxide glasses and new optical glasses, Florida, USA, November 2006. (In press: Phys. and Chem. Of Glasses)

• Ashtosh Ganjoo, H. Jain, S. Khalid and C.G. Pantano
  Structural modification of Ge-Se glasses with the addition of Sb
  Philospohical Magazine Letters, 85 (2005) 503.

• Ashtosh Ganjoo, H. Jain, J.V. Ryan, R. Song, R. Chanda, J. Irudayaraj, Y.J. Ding and C.G. Pantano
  Fabrication of chalcogenide glass waveguide for IR evanescent wave sensors,
  Proc. SPIE, 5593 (Nanosensing: Materials and Devices) (2004), 637.

• K. Shimakawa, M. Nessa, T. Ishida and Ashtosh Ganjoo
  Quantum efficiency of light-induced defect creation in amorphous semiconductors
  Philosophical Magazine B, 84, (2004) 89.

• R. Song, X. Mu, Ashtosh Ganjoo, Y.J. Ding and H. Jain
  Design, characterization and optimization of waveguides based on chalcogenide glasses for biosensors
  Proc. SPIE, 5585 (Chemical and Biological point Sensors for Homeland Defence II) (2004), 58.

• T. Aoki, S. Komedoori, S. Kobayashi, T. Shimizu, Ashtosh Ganjoo and K. Shimakawa
  Photoluminescence lifetime distributions of chalcogenide glasses obtained by wide-band frequency resolved spectroscopy (Invited paper)
  J. Non-Cryst. Solids, 326&327, (2003), 273.

• K. Shimakawa and Ashtosh Ganjoo
  ac photoconductivity of hydrogenated amorphous silicon: Influence of long-range potential fluctuations
  Phys. Rev. B, 65, (2002) 165213-1.

• Ashtosh Ganjoo and K. Shimakawa
  Dynamics of photodarkening in amorphous chalcogenides (Invited paper)
  Special issue of Journal of Optoelectronics and Advanced Materials, 4, (2002) 595.

• T. Aoki, S. Komedoori, S. Kobayashi, T. Shimizu, Ashtosh Ganjoo and K. Shimakawa
  Excitonic photoluminescence in amorphous semiconductors
  Nonlinear Optics, 29, (2002) 273.

• Ashtosh Ganjoo, K. Shimakawa, K. Kitano and E.A. Davis,
  Transient photodarkening in amorphous chalcogenides (Invited paper)
  J. Non-Cryst. Solids, 299-302, (2002), 917.

• K. Shimakawa and Ashtosh Ganjoo,
  Photoconductivity of macroscopically inhomogeneous semiconductors: case example of a-Si:H, (Invited paper)
  J. Non-Cryst. Solids, 299-302, (2002), 798.

• K. Shimakawa, Ashtosh Ganjoo and N. Hishikawa,
  Dynamics of Photoconductivity in a-As2Se3: a.c. loss approach.
  J. Non-Cryst. Solids, 299-302, (2002), 1002.

• T. Aoki, S. Komedoori, S. Kobayashi, C. Fujihashi, Ashtosh Ganjoo and K. Shimakawa,
  Photoluminescence lifetime distribution of a-Si:H and a-Ge:H expanded to nanosecond region using wide-band frequency resolved spectroscopy,
  J. Non-Cryst. Solids, 299-302, (2002), 642.

• M. Nessa, K. Shimakawa and Ashtosh Ganjoo,
  Quantum efficiency of photoinduced defect creation in amorphous As2Se3 films
  Journal of Optoelectronics and Advanced Materials, 4, (2002) 93.

• Ashtosh Ganjoo and K. Shimakawa,
  Transient and metastable photodarkening in amorphous chalcogenides, (Invited paper),
  Journal of Optoelectronics and Advanced Materials, 3, (2001) 221.

• K. Shimakawa and Ashtosh Ganjoo,
  Current understanding of photoinduced volume and bandgap changes in amorphous chalcogenides, (Invited paper),
  Journal of Optoelectronics and Advanced Materials, 3, (2001) 167.

• Ashtosh Ganjoo, K. Shimakawa, H. Kamiya, E.A. Davis and Jai Singh,
  Percolative growth of photodarkening in amorphous As2S3 films.
  Phys. Rev B (Rapid Commun.), 62, (2000) R14601.

• Ashtosh Ganjoo, Y. Ikeda and K. Shimakawa,
  In-situ measurements of photo-induced volume changes in amorphous chalcogenide films.
  J. of Non Cryst. Solids, 266-269, (2000) 919.

• M. Nessa, K. Shimakawa, Ashtosh Ganjoo and J. Singh,
  Fundamental optical absorption on fractals: A case example for amorphous chalcogenides.
  Journal of Optoelectronics and Advanced Materials, 2, (2000) 133.

• Ashtosh Ganjoo, K. Shimakawa, N. Yoshida, T. Ohno, A.Kolobov and Y. Ikeda
  Photo-induced changes of ac transport in a-As2Se3 films: Role of defects and band tails
  Phys. Rev. B, 59 (1999) 14856.

• Ashtosh Ganjoo and K. Shimakawa,
  Dynamics of photo-structural changes in amorphous semiconductors. (Invited paper)
  Homage book “Academician Prof. A. Andriesh” (INOE and INFM Publishing House, Bucharest 1999) p. 145.

• Ashtosh Ganjoo, N. Yoshida and K. Shimakawa,
  Photoinduced structural changes in amorphous semiconductors (Review article).
  Recent Research Developments in Applied Physics, ed. M. Kawasaki, N. Ashgriz and R. Anthony (Research Signpost, Trivandrum 1999) p. 129.

• Ashtosh Ganjoo, Y. Ikeda and K. Shimakawa
  In-situ photoexpansion of amorphous As2S3 films: Role of photocarriers.
  Appl. Phys. Lett., 74, (1999) 2119.

• K. Shimakawa, Ashtosh Ganjoo and N. Yoshida,
  Current topics of photoinduced metastabilities in amorphous semiconductors (Invited Review).
  Thin films materials and devices-Developments in Science and Technology, ed. J.M. Marshall, N. Kirov, A. Vavrek, J.M. Maud, (World Scientific) (1999) p. 21.

• Y. Kuzukawa, Ashtosh Ganjoo, K. Shimakawa and Y. Ikeda,
  Photo-induced structural changes in obliquely deposited arsenic-based amorphous chalcogenides: A model for photostructural changes
  Phil. Mag. B, 79, (1999) 249.

• K. Shimakawa, N. Yoshida, Ashtosh Ganjoo, Y. Kuzukawa and J. Singh,
  A model for the photostructural changes in amorphous chalcogenides
  Phil. Mag. Lett., 77, (1998) 153.

• Y. Kuzukawa, Ashtosh Ganjoo and K. Shimakawa,
  Photo-Induced structural changes in obliquely deposited As- and Ge- based amorphous chalcogenides : Correlation between changes in thickness and band gap.
  J. of Non-Cryst. Solids, 227-230, (1998) 715.

• K. Takeda, H. Hikita, A. Kondo, Ashtosh Ganjoo, K. Shimakawa and K. Morigaki,
  Light-Induced annealing of dangling bonds in He-diluted glow discharge a-Si:H films.
  J. of Non-Cryst. Solids, 227-230, (1998) 311.

• A. Yoshida, K. Utsumi and Ashtosh Ganjoo
  Si epitaxial growth at low temperatures using remote plasma process
  Applied Surface Science, 100-101, (1996) 491.

• A. Kondo, Ashtosh Ganjoo, K. Shimakawa, K. Hayashi and A. Kolobov,
  Photo-induced effects on the capacitance of a-Se and a-Si:H thin films: A model of photodegradation.
  Future directions in Thin Film Science and Technology; ed. by J.M. Marshall, N. Kirov, A. Varvek and J.M. Maud (World Scientific, 1997) 337.

• Y. Yamamoto, T. Yamaguchi, Y. Demizu, T. Tanaka, Ashtosh Ganjoo and A. Yoshida,
  Characterization of CuInSe2 thin films prepared by Excimer Laser Ablation
  Crystal Res. Technol., 31, (1996), 473.

• A. Yoshida, K. Maeda, S. Ikeda and Ashtosh Ganjoo,
  Preparation of ZnO thin films using Undulator and ArF excimer laser radiations
  Journal of Electron Spectroscopy and Related Phenomena, 80, (1996) 97.

• Ashtosh Ganjoo, A. Yoshida and K. Shimakawa,
  Random walk approach for the proper estimation of density of charged defect states in amorphous chalcogenides
  J. of Non-Cryst. Solids, 198-200, (1996) 313.

• R. M. Mehra, Ashtosh Ganjoo, Gurinder and P.C. Mathur,
  Effect of In impurity on the crystallization kinetics of (Se0.7Te0.3)1-xInx system.
  J. of Thermal Analysis, 45, (1995) 405.

• Ashtosh Ganjoo and K. Shimakawa,
  Estimation of density of charged defects in amorphous chalcogenides from ac conductivity: Random walk approach for bipolarons based on Correlated Barrier Hopping.
  Phil. Mag. Lett., 70, (1994) 287.

• R. M. Mehra, Ashtosh Ganjoo and P.C. Mathur,
  Electrical and optical properties of (Se0.7 Te0.3)1-xInx system.
  J. of App. Phys., 75, (1994) 7334.

• R. M. Mehra, Gurinder, Ashtosh Ganjoo and P.C. Mathur,
  Effect of antimony doping on the transport properties of SeTe system.
  Physica Status Solidi (a), 124, (1991) K51.

• R. M. Mehra, Ashtosh Ganjoo and P.C. Mathur,
  Negative Magneto resistance phenomena in amorphous semiconductors (Review article).
  Journal of Semiconductor Materials and Devices, 2, (1990) 27.

• H. Kumar, M. Arora, P. Sikka, Ashtosh Ganjoo and P.C. Mathur,
  Thermoelectric power of the bulk amorphous GexSe1-x system.
  Semiconductor Science and Technology, 4, (1989) 1135.

International Conferences/Technical and Other Reports:

• Low temperature deposition of silicon films by remote plasma chemical vapor deposition (RPCVD).
  K. Utsumi, Ashtosh Ganjoo and A. Yoshida.
  Technical Report of IEICE Japan. SDM, 94-113, (1994) 15.

• Preparation of ZnO thin films from DEZn at various temperatures using undulator radiation (UR)-excited CVD
  Ashtosh Ganjoo, S. Ikeda, K. Maeda and A. Yoshida
  Annual report of Institute for Molecular Sciences, Okazaki, Japan, 22, p.84, 1995.

• Low-temperature Si epitaxial growth by remote plasma-enhanced CVD.
  T. Nishida, K. Utsumi, Ashtosh Ganjoo and A. Yoshida
  Technical Report of IEICE Japan. SDM, 95-150, no. 317, (1995) 39.

• Effect of Undulator Radiation irradiation on the thin films of a-Si:H.
  Ashtosh Ganjoo, K. Maeda, O. Hosokawa and A. Yoshida
  Annual report of Institute for Molecular Sciences, Okazaki, Japan, 1996.

• Scanning Tunneling Microscope Observation of the adsorption and Undulator Light-induced effect of DEZn on MoS2 (0001).
  K. Maeda, O. Hosokawa, Ashtosh Ganjoo and A. Yoshida
  Annual report of Institute for Molecular Sciences, Okazaki, Japan, 1996.

• STM and XPS analyses of Zn deposited surface using Undulator Radiation (UR)-excited CVD on MoS2 and Si.
  K. Maeda, O. Hosokawa, Ashtosh Ganjoo and A. Yoshida
  Annual report of Institute for Molecular Sciences, Okazaki, Japan, 1996.

• Low-temperature Si epitaxial growth by remote plasma-enhanced CVD (II).
  Ashtosh Ganjoo, T. Nishida, Be-In Hoe and A. Yoshida
  Technical Report of IEICE Japan. SDM, 96-115, no. 344, (1995) 59.

• Temperature and Photo-induced effects on the Capacitance of amorphous chalcogenide thin films.
  Ashtosh Ganjoo, A. Kondo, K. Shimakawa and A. Kolobov
  Proc. 4th International Conference and Intensive Course on Semiconductor Physics held in New Delhi, India, December 16-21, 1996.